Researchers at Kyoto University have developed a silicon carbide (SiC) transistor designed to operate ...

Kyoto University researchers have demonstrated a silicon carbide transistor capable of operating at temperatures up to 600°C, ...

Dublin, Jan. 28, 2026 (GLOBE NEWSWIRE) -- The "Junction Field Effect Transistors (JFETs) Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report offers vital statistics on ...

Electronic devices usually don’t cope well with extreme heat. But researchers in Japan have developed a new type of ...

A new silicon carbide transistor architecture improves high-temperature control and leakage performance, enabling reliable ...

Researchers研究者名 Kaneko, Mitsuaki Activity Database on Education and Research 研究者名 Kimoto, Tsunenobu Activity Database on ...

The newly created SiC junction transistor and its electrical characteristics from room temperature to 600°C. Credit: Science ...

A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion ...

The Nature Index 2026 Research Leaders reveal the leading institutions and countries/territories in the natural sciences, health sciences, applied sciences and social sciences, according to their ...

SCOTTSDALE, Ariz.--(BUSINESS WIRE)--onsemi (Nasdaq: ON) today announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology ...

A new technical paper titled “Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies” was published by researchers at University of Glasgow. “The ...