Business Wire

Toshiba’s Newly Developed Fully Isolated N-channel LDMOS Realizes High HBM Robustness and High Breakdown Voltage to Negative Bias in 0.13-Micron Generation Analog Power ...

TOKYO--(BUSINESS WIRE)--Toshiba (TOKYO:6502) has developed fully isolated N-channel LDMOS technology that overcomes the trade-off between breakdown voltage to negative bias (BVnb) and HBM robustness, ...
EDN

BCDMOS evolves to handle wide range of ultra-high-voltage applications

BCDMOS continues to evolve as the preferred process for integrating Bipolar (analog), CMOS (logic) and DMOS (power) functions on a single chip destined for ultra high voltage (UHV) applications. While ...
New Electronics

RF LDMOS power transistors

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...
Electronic Design

Rugged 2-kW RF Power LDMOS Transistor for ISM Apps

Ampleon has released the first of a family of RF power devices based on its Advanced Rugged Technology (ART) derivative of the ninth-generation high-voltage LDMOS process technology. The process has ...
Nature

Power Device Engineering and Semiconductor Technologies

Power device engineering encompasses the design, fabrication and optimisation of semiconductor components capable of handling high voltages and currents with minimal losses. Central to this field are ...