Microcontrollers increasingly include pulse-width modulators which will happily drive the gate of a mosfet if switching speed is not an issue. But when a bit more performance is required, or n-channel ...
A recent problem with oscillation in a MOSFET gate driver had an engineer scrambling to find a solution to avoid shutting the production line down. It was hoped that reviewing the board design would ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
This product is CREE’s silicon carbide (SiC) MOSFET, which is an R&D breakthrough product being sampled by specific system manufacturers This year Power Electronics Technology has selected a ...
As high-power MOSFETs present a significant load to their associated gate drive circuit, efficient operation requires the proper drive. One requirement for the gate driver in high frequency ...
SUNNYVALE, Calif., July 11, 2017 (GLOBE NEWSWIRE) -- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq:AOSL), a designer, developer and global supplier of a broad range of power semiconductors and ...
Additionally, αMOS5 TM significantly improves switching performance compared to major competitors; AOTF190A60L offers lower total gate charge with much shorter switching plateau time, which helps ...
Described as ‘revolutionary’, Infineon’s CoolSiC silicon carbide MOSFET technology is said to achieve previously unattainable levels of power density and performance. Its new 1200V SiC MOSFETs have ...
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