The 250A STV250N55F3 power MOSFET combines ribbon bonding with a surface-mount power package to deliver 1.5-mΩ on-resistance with the ability to handle high currents for 55V applications. The MOSFET ...
GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...
SAN DIEGO--(BUSINESS WIRE)--StratEdge Corporation, leader in the design, production, and assembly of high frequency and high power semiconductor packages for microwave, millimeter-wave, and high-speed ...
PARIS – European chipmaker STMicroelectronics NV has introduced a low micro-Ohm ON-resistance power MOSFET aiming to reduce losses and improve efficiency in demanding power supply systems.
From STMicroelectronics, the STV300NH02L power MOSFET provides micro-ohm on-resistance to reduce losses in power supply systems such as server applications where n-channel MOSFETs are used to parallel ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback