South Korean chipmaker SK hynix Inc. has showcased its strategy for next-generation NAND storage products customized for the ...

Kitguru.net Hardware editors Leo Waldock and Luke Hill discuss 3D nand and which ssd interface is going to be the most widely ...

Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...

Samsung is firing back at Intel with a potent new SSD, but will it stand toe-to-toe with Intel's newer 3D XPoint technology? Share on Facebook (opens in a new window) Share on X (opens in a new window ...

Rob Crooke, the Vice President and General Manager of the NVM (Non-Volatile Memory) Solutions Group at Intel, announced the impending release of 3D NAND at Intel's Investor Meeting. Incidentally, the ...

SK hynix Inc. announced today that it presented its next-generation NAND storage product strategy at the '2025 OCP (Open ...

Intel-Micron have recently introduced a scalable planar NAND cell for the 20nm technology [1]. Replacement of conventional wrap floating gate (FG) NAND memory cell with a High-K/Metal gate planar cell ...

The 74AHC30 is a high-speed 8-input NAND gate with balanced propagation delays. This Si-gate CMOS device is pin compatible with low-power Schottky TTL . Its inputs have Schmitt-trigger actions and ...

The SN54AC00-SP device contains four independent 2-input positive-NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic. SN54AC00-SP is tolerant to radiation.

Samsung is firing back at Intel with a potent new SSD, but will it stand toe-to-toe with Intel's newer 3D XPoint technology? Share on Facebook (opens in a new window) Share on X (opens in a new window ...