GaN has emerged as one of the most disruptive semiconductor technologies of the decade. Consumer applications, particularly ...
Sivers Semiconductors AB has announced another solid quarter, with Q3 2025 results demonstrating sustained performance, ...
To meet these demands, the Berlin-based Ferdinand-Braun-Institut (FBH) has developed a novel, highly efficient and compact ...
Buchner joins Wolfspeed from Infineon Technologies AG, where he most recently served as SVP of marketing for the Power & ...
The UK Semiconductor Centre has moved into its next phase of mobilisation with the announcement of its newly formed Interim ...
Ams Osram and Nichia have expanded their long-standing IP collaboration with comprehensive cross-license agreement covering ...
A US collaboration is making tremendous strides towards the commercialisation of AlN/GaN HEMTs with an AlN buffer, grown on ...
Vacuum+Fab Solutions will be showing its vacuum technology and gas abatement systems at Semicon Europa, from November 18 to ...
Rohm has released a new white paper detailing its solutions for AI data centres based on NVIDIA's 800V DC architecture. As ...
The breakthrough, by a research team led by Seiichiro Izawa of the Materials and Structures Laboratory at Science Tokyo, was ...
Vertical Semiconductor, a spin-out from the Massachusetts Institute of Technology (MIT), has announced $11 million in seed funding to help accelerate development of vertical GaN transistors to deliver ...
Johannes Schoiswohl, head of the GaN Business Line at Infineon said: “Our 100V GaN auto transistor solutions and the upcoming portfolio extension into the high-voltage range are an important milestone ...
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