While SiC isn’t yet a mainstream material in operational tokamaks, it’s on the radar as a plasma-facing material for fusion reactor designs. In the spasmodic quest for an inexhaustible and clean ...

The converters manage light-load conditions using a proprietary control method that guarantees power supplies and chargers remain completely silent in operation, delivering an enhanced overall user ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on AI-Driven Smart Manufacturing, Pathfinding PDKs, and Energy Harvesting in Smart Building IoT! Here’s a ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

In sensorless control systems, the magnetic angle of the motor is estimated from the motor phase voltages and currents. Its position is determined by monitoring certain electrical parameters of the ...

What is Silicon Carbide technology? Silicon Carbide (SiC) is an innovative technology that will replace silicon in many applications. The idea of using SiC for electric vehicles (EVs) was born when ...

The DC-DC converter is a more or less complex device whose task is to carry out a DC voltage transformation from one level to another Often, the need to convert one DC voltage into another in the ...

In recent years, the European Union (EU) has implemented a range of strategic policies and financial initiatives aimed at fostering high-tech investments. These efforts are designed to strengthen ...

To fully maximize the benefits of WBG tech, system redesign is essential. Wide-bandgap (WBG) semiconductors, namely silicon carbide and gallium nitride, have been an emerging frontier in power ...

Higher efficiency and size are always an important concern in the design of a switching mode power supply, especially for energy saving and environmental protection Worldwide, the Electronics Industry ...

SiC and GaN are recently introduced wide-bandgap semiconductors which have the advantage of more power efficiency, and a lower cost. As the demand for electric vehicles increases day by day, the need ...

While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...